Publication: Stoichlometry control over a wide composition range of sputtered CuGa_(x)In_(1-x)Se_(2)
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1994-03-07
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Mártil de la Plaza, Ignacio
Hernández Rojas, J.L.
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American Institute of Physics
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Abstract
Films of CuGaxIn(1-x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From CGIS Cu-poor (16 at. %) to Cu2Se. Reevaporation of (Ga,In)2Se3 binaries is observed when substrate temperature is increased at a constant argon pressure (20 mTorr). An increase in Ar pressure from 5 to 150 mTorr at a growth temperature of 450-degrees-C, produces a decrease in Cu atomic percentage from 24% to 16% due to a preferential diffusion of Cu sputtered atoms in the plasma. The relevant film properties of the analyzed films are found to be ruled by the Cu content. Graded composition absorbers with adequate physical properties for the fabrication of photovoltaic devices are grown with a proper choice of growth parameters.
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© American Institute of Physics. This work was partially supported by the European Communities under Contract JOU2-CT92-0141.
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1) L. Stolt, J. Hedstriim, J. Kessler, M. Ruckh, K. Velthaus, and H. Schock, Appl. Phys. Lett., 62, 597 (1993).
2) K.W. Mitchell, C. Eberspacher, J. Ermer, and D. Pier, Proceedings of the 20th IEEE Photovoltaic Specialist Conference (IEEE, New York, 1988), p. 1384.
3) J.L. Hernández-Rojas, M.L. Lucía, I. Mártil, J. Santamaría, G. González-Díaz, and F. Sánchez-Quesada, Appl. Phys. Lett., 60, 1875 (1992).
4) J.L. Hernández-Rojas, M.L. Lucía, I. Mártil, G. González-Díaz, J. Santamaría, and F. Sánchez-Quesada, Appl. Opt., 31, 1606 (1992).
5) A. Rockett, T.C. Lommasson, L.C. Yang, H. Talien, P. Campos, and J.A. Thornton, Proceedings of the 20th IEEE Photovoltaic Specialist Conference (IEEE, New York, 1989), p. 1505.
6) D.S. Albin, J.R. Tuttle, G.D. Mooney, J.J. Carapella, A. Duda, A. Mason, and R. Noufi, Proceedings of the 21st IEEE Phocovoltaic Specialist Conference (IEEE, New York, 1990), p. 562.
7) J.R Tuttle, D.S. Albin, and R. Noufi, Sol. Cells, 30, 21 (1991).
8) T. Walter and H.W. Shock, Thin Solid Films, 224, 74 (1993).