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Stoichlometry control over a wide composition range of sputtered CuGa_(x)In_(1-x)Se_(2)

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Mártil de la Plaza, Ignacio and González Díaz, Germán and Hernández Rojas, J.L. and Lucía Mulas, María Luisa and Santamaría Sánchez-Barriga, Jacobo and Sánchez Quesada, Francisco (1994) Stoichlometry control over a wide composition range of sputtered CuGa_(x)In_(1-x)Se_(2). Applied physics letters, 64 (10). pp. 1239-1241. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.110851


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Abstract

Films of CuGaxIn(1-x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From CGIS Cu-poor (16 at. %) to Cu2Se. Reevaporation of (Ga,In)2Se3 binaries is observed when substrate temperature is increased at a constant argon pressure (20 mTorr). An increase in Ar pressure from 5 to 150 mTorr at a growth temperature of 450-degrees-C, produces a decrease in Cu atomic percentage from 24% to 16% due to a preferential diffusion of Cu sputtered atoms in the plasma. The relevant film properties of the analyzed films are found to be ruled by the Cu content. Graded composition absorbers with adequate physical properties for the fabrication of photovoltaic devices are grown with a proper choice of growth parameters.


Item Type:Article
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© American Institute of Physics. This work was partially supported by the European Communities under Contract JOU2-CT92-0141.

Uncontrolled Keywords:Thin-Films.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27114
Deposited On:16 Oct 2014 09:48
Last Modified:10 Dec 2018 14:58

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