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Spatial distribution of vacancy defects in GaP wafers

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Domínguez-Adame Acosta, Francisco and Piqueras de Noriega, Javier and De Diego, N. and LLopis, J. (1988) Spatial distribution of vacancy defects in GaP wafers. Journal of Applied Physics, 63 (8). pp. 2583-2585. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.340994


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Abstract

Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy‐type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared.


Item Type:Article
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© American Institute of Physics.
The authors thank Wacker-Chemitronic (DR. K. Löhnert) for providing the samples. The help of P. Fernández is acknowledged

Uncontrolled Keywords:Physics, Applied
Subjects:Sciences > Physics > Materials
ID Code:27126
Deposited On:20 Oct 2014 08:51
Last Modified:09 Feb 2018 15:04

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