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Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering



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Mártil de la Plaza, Ignacio y González Díaz, Germán y Hernández Rojas, J. L. y Lucía Mulas, María Luisa y Sánchez Quesada, Francisco y Santamaría Sánchez-Barriga, Jacobo (1992) Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering. Applied physics Letters, 60 (15). pp. 1875-1877. ISSN 0003-6951

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URL Oficial: http://dx.doi.org/10.1063/1.107140

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CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively.

Tipo de documento:Artículo
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© American Institute of Physics. The authors would like to express their acknowledgments to S. García-Martín (XRD facilities) and J. Carabe (Optical Measurement facilities).

Palabras clave:Physics, Applied.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:27132
Depositado:20 Oct 2014 09:01
Última Modificación:05 Jul 2018 16:17

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