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Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering

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http://dx.doi.org/10.1063/1.107140
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Publication Date
1992-04-13
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Amer Inst Physics
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Abstract
CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively.
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© American Institute of Physics. The authors would like to express their acknowledgments to S. García-Martín (XRD facilities) and J. Carabe (Optical Measurement facilities).
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Electricidad , Electrónica (Física)
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2202.03 Electricidad
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https://hdl.handle.net/20.500.14352/59311
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