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Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films

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Mártil de la Plaza, Ignacio and González Díaz, Germán and Sánchez Quesada, Francisco and Santamaría Sánchez-Barriga, Jacobo (1990) Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films. Journal of Applied Physics, 68 (1). pp. 189-194. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.347113


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Abstract

Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se‐excess films are obtained, showing high resistivity (≊103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single‐crystal counterparts). At the higher growthtemperatures,polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single‐crystal values). A hopping conduction mechanism has been detected at the lower measuringtemperature (T<150 K), and a grain boundary limited conduction process at the higher measurementstemperature (T>150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties.


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© American Institute of Physcis. The authors would like to express their acknowledgment to J. Carabe (Instituto de Energías Renovables, C.I.E.M.A.T.) for optical measurements facilities and J.M. Gómez de Salazar (Departamento de Metalurgia, U.C.M.) for S.E.M. observations and EDAX analysis. This work was partially supported by the U.S.-Spain Joint Committee for Science and Technology under Grant No. CCA-84111046.

Uncontrolled Keywords:Physics, Applied.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27150
Deposited On:28 Oct 2014 11:50
Last Modified:10 Dec 2018 14:58

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