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Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

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Lucía Mulas, María Luisa y Pampillón Arce, María Ángela y San Andrés Serrano, Enrique y Feijoo Guerrero, Pedro Carlos (2013) Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon. Journal of Vacuum Science & Technology B, 31 (1). ISSN 1071-1023

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URL Oficial: http://dx.doi.org/10.1116/1.4769893


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Gadolinium oxide thin films were deposited on silicon by a two-step process: high pressure sputtering from a metallic gadolinium target followed by an in situ plasma oxidation. Several plasma conditions for metal deposition and oxidation were studied in order to minimize the growth of a SiOx layer at the interface between the high permittivity dielectric and the silicon substrate and to avoid substrate damage. Plasma emission was studied with glow discharge optical spectroscopy. The films were structurally characterized by Fourier transform infrared spectroscopy. Metal-insulator-semiconductor capacitors were fabricated with two different top metals (titanium and platinum) to analyze the influence of deposition conditions and the metal choice. Pt gated devices showed an interfacial SiOx regrowth after a forming gas annealing, while Ti gates scavenge the interface layer.


Tipo de documento:Artículo
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© American Vacuum Society. The authors would like to acknowledge C.A.I. de Técnicas Físicas and C.A.I. de Espectroscopía y Espectrometría of the Universidad Complutense de Madrid. This work was funded by the Spanish Ministerio de Economía y Competividad through the project TEC2010-18051. Works of M.A. Pampillón and P.C. Feijoo were funded by the FPI program and FPU Grant No. AP2007-01157, respectively.

Palabras clave:Field-effect transistors; Thermal-stability; Oxide; Scandate; Dielectrics; Technology; Interfaces
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:27287
Depositado:12 Nov 2014 13:16
Última Modificación:22 Oct 2015 14:06

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