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Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

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González Díaz, Germán y Artús, L. y Blanco, N. y Cuscó, R. y Ibáñez, J. y Long, A.R. y Rahman, M. (2000) Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Journal of Applied Physics, 88 (11). pp. 6567-6570. ISSN 0021-8979

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URL Oficial: http://dx.doi.org/10.1063/1.1322593


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We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.


Tipo de documento:Artículo
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© American Institute of Physics. The authors wish to acknowledge financial support from the Spanish Ministry of Science and Technology.

Palabras clave:P-Type GaAs, Carrier Concentration, Plasmon Modes, Phonon Modes, InP, Spectra.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:27441
Depositado:25 Nov 2014 13:02
Última Modificación:10 Dic 2018 14:58

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