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Raman scattering by LO phonon-plasmon coupled modes in n-type InP

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González Díaz, Germán and Blanco, N. and Artús, L. and Cuscó, R. and Ibáñez, J. (1999) Raman scattering by LO phonon-plasmon coupled modes in n-type InP. Physical Review B, 60 (8). pp. 5456-5463. ISSN 0163-1829

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Official URL: http://dx.doi.org/10.1103/PhysRevB.60.5456


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Abstract

We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the nonparabolicity of the InP conduction band as well as temperature and finite wave-vector effects is used to fit the Raman spectra and extract accurate values of the electron density. The results obtained from the Lindhard-Mermin model are compared with the charge density determinations based on the Drude and the hydrodynamical models, and the approximations involved in these models are discussed.


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© The American Physical Society. The authors would like to acknowledge the Spanish Ministerio de Educación y Cultura for financial support.

Uncontrolled Keywords:P-Type GaAs, Carrier Concentration, Conduction-Band, Gallium Nitride, Spectra, Photoluminescence, Nonparabolicity, Crystals, GaP.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27481
Deposited On:28 Nov 2014 10:05
Last Modified:10 Dec 2018 14:58

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