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Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP

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González Díaz, Germán and Martín, J.M. and Artús, L. and Cuscó, R. and Ibañez, J. (1997) Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP. Journal of Applied Physics, 82 (8). pp. 3736-3739. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.365753


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Abstract

We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 degrees C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved.


Item Type:Article
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© American Institute of Physics. The authors gratefully acknowledge the Spanish Ministerio de Educación y Ciencia for financial support.

Uncontrolled Keywords:Ion-Implantation, GaAs, Damage, Silicon.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27482
Deposited On:28 Nov 2014 10:08
Last Modified:10 Dec 2018 14:58

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