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Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices

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2001-01-15
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Parisini, A.
Tarricone, L.
Bellani, V.
Parravicini, G. B.
Hey, R.
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American Physical Society
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We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.
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© 2001 The American Physical Society. We are grateful to J. C. Flores, K. Fujiwara, G. Guizzetti, M. Hilke, C. Kanyinda-Malu, A. Stella, and D. Tsui for their enlightening discussions. Work in Italy has been supported by the INFM Network ‘‘Fisica e Tecnologia dei Semiconduttori III-V’’ and in Madrid by DGES under Project MAT2000-0734.
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