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Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics

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Castro, Mario and Domínguez-Adame Acosta, Francisco and Sánchez, A. and Rodriguez, T. (1999) Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics. Applied Physics Letters, 75 (15). pp. 2205-2207. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.124965


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Abstract

We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain-size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to a certain degree of crystallinity of the amorphous phases during deposition, or more generally, to impurities or roughness of the substrate.


Item Type:Article
Additional Information:

© 1999 American Institute of Physics. The authors wish to thank A. Rodríguez, J. Olivares, and C. Ballesteros for stimulating discussions on experimental issues, and E. Maciá for helpful comments. This work has been supported by CAM under Project No. 07N/0034/98 (M.C. and F.D.-A.), by DGES under Project No. PB96-0119 (A.S.), and by Contract No. MAT96-0438 (T.R.).

Uncontrolled Keywords:Recrystallization, Simulation, Nucleation, Growth, Metals
Subjects:Sciences > Physics > Materials
ID Code:27580
Deposited On:05 Dec 2014 11:29
Last Modified:05 Dec 2014 11:29

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