Publication: Electron transport across a Gaussian superlattice
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1999-04-01
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American Institute of Physics
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We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j-V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices.
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© 1999 American Institute of Physics.
Work at Madrid has been supported by CAM (Spain) under Project No. 07N/0034/1998.
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