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Electronic states in graded-gap junctions with band inversion

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Domínguez-Adame Acosta, Francisco (1995) Electronic states in graded-gap junctions with band inversion. Physics Letters A, 202 (5-6). pp. 395-397. ISSN 0375-9601

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Official URL: http://dx.doi.org/10.1016/0375-9601(95)00363-8




Abstract

We theoretically study electronic states in graded-gap junctions of IV-VI compounds with band inversion. Using a two-band model within the k . p approximation and assuming that the gap and the gap centre present linear profiles, we demonstrate the existence of a set of localized states along the growth direction with a discrete energy spectrum. The envelope functions are found to be a combination of harmonic oscillator eigenfunctions, and the corresponding energy levels are proportional to the square root of the quantum number. The level spacing can be directly controlled by varying the structure thickness.


Item Type:Article
Additional Information:

© Elsevier. The author thanks A. Sánchez for a critical reading of the manuscript. This work is supported by DGICYT (Spain) under project MAT95-0325.

Uncontrolled Keywords:Dirac-Equation, Heterojunctions
Subjects:Sciences > Physics > Materials
ID Code:27710
Deposited On:11 Dec 2014 15:25
Last Modified:11 Dec 2014 15:25

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