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Thomas-fermi approach to resonant-tunneling in delta-doped diodes

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Díez, E. and Domínguez-Adame Acosta, Francisco and Sánchez, Angel (1995) Thomas-fermi approach to resonant-tunneling in delta-doped diodes. Journal of Applied Physics, 77 (9). pp. 4816-4819. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.359404


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Abstract

We study resonant tunneling in B-S-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation. we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diode. 0 1995 American Institute of Physics.


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© 1995 American- Institute of Physics.
F. D.-A. acknowledges support from UCM through project PR161/93-4811. A. S. acknowledges partial support from C.I.C. y T. (Spain) through project PB92-0248 and by the European Union Human Capital and Mobility Programme through contract ERBCHRXCT930413.

Uncontrolled Keywords:Physics, Applied
Subjects:Sciences > Physics > Materials
ID Code:27712
Deposited On:11 Dec 2014 15:27
Last Modified:16 Dec 2014 08:28

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