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Origin of the surface metallization in single-domain K/Si(100)2x1

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Segovia, P. and Castro, G. R. and Mascaraque Susunaga, Arantzazu and Prieto, P. and Kim, H. J. and Michel, E. G. (1996) Origin of the surface metallization in single-domain K/Si(100)2x1. Physical review B, 54 (20). pp. 14277-14280. ISSN 0163-1829

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Official URL: http://dx.doi.org/10.1103/PhysRevB.54.R14277


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Abstract

The electronic structure and the metallization onset of single-domain K/Si(100)2x1 have been investigated with angle-resolved polarization-sensitive ultraviolet photoemission. The electronic states producing the surface metallization have been studied for increasing K coverages up to room-temperature saturation. As K coverage increases, the interface undergoes a transition at a critical coverage, from a low-coverage semiconducting phase, to a saturation-coverage metallic phase. Two different surface states (F-1 and F-2) have been detected in the vicinity of the Fermi level. These two states are sequentially filled along the metallization process. The coverage dependence of both F-1 and F-2, and their symmetry properties indicate that the metallization is due to the filling of an initially empty surface band (appearance of F-2) We relate F-1 to the completion of K chains in the single-domain surface. The changes detected in K 3p line shape correlate well with the modifications of the valence band, and support that the surface remains semiconducting up to the filling of F-2.


Item Type:Article
Additional Information:

© 1996 The American Physical Society.
This work was financed by DGICYT (Spain) under Grants Nos. PB-94-1527 and SAB-950019P.

Uncontrolled Keywords:Angle-Resolved photoemission, Electronic-Properties, Si(001)2x1-K Surface, Vicinal Si(100), States, Potassium, Coverage, Adsorption, Existence
Subjects:Sciences > Physics > Materials
ID Code:28685
Deposited On:24 Feb 2015 10:04
Last Modified:24 Feb 2015 10:04

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