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Laser induced single events in SRAMs

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Palomar Trives, Carlos y López Calle, Isabel y Franco Peláez, Francisco Javier y Agapito Serrano, Juan Andrés y González Izquierdo, Jesús (2013) Laser induced single events in SRAMs. In Proceedings of the 2013 Spanish Conference on Electron Devices (CDE 2013). Spanish Conference on Electron Devices . IEEE-Inst Electrical Electronics Engineers Inc, pp. 253-256. ISBN 978-1-4673-4666-5

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URL Oficial: http://dx.doi.org/10.1109/CDE.2013.6481390


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http://ieeexplore.ieee.org/Editorial


Resumen

This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.


Tipo de documento:Sección de libro
Información Adicional:

©IEEE.
E-ISBN : 978-1-4673-4667-2.

Spanish Conference on Electron Devices (CDE)(9. 2013. Valladolid, España)

Palabras clave:SRAM chips; Laser beam effects; Radiation hardening (electronics); SRAM;error emulation; Laser induced single events; Pulsed laser; Semiconductor memory; Sensitivity map; Space radiation; Microprocessors; Performance evaluation; Polymers; Radiation effects; Semiconductor lasers; Sensitivity; Laser; MCU; SEU; Errors; Memory; Sensitivity map
Materias:Ciencias > Física > Electrónica
Ciencias > Física > Optica
Ciencias > Informática > Circuitos integrados
Código ID:29179
Depositado:11 Mar 2015 18:12
Última Modificación:10 Dic 2018 14:58

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