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Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions

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Bruno, F. Y. and Garcia Barriocanal, Javier and Torija, M. and Rivera Calzada, Alberto Carlos and Sefrioui, Zouhair and Leighton, C. and León Yebra, Carlos and Santamaría Sánchez-Barriga, Jacobo (2008) Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions. Applied physics letters, 92 (8). ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2887905


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Abstract

Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.


Item Type:Article
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© 2008 American Institute of Physics. The work at UCM was supported by MEC MAT 2005—06024 C02 and work at UMN was supported by NSF DMR.

Uncontrolled Keywords:Physics, Applied.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:30541
Deposited On:01 Jun 2015 09:41
Last Modified:10 Dec 2018 14:58

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