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Effects of the d-donor level of vanadium on the properties of Zn_(1-x)V_(x)O films

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García Hemme, Eric and Yu, K. M. and Wahnon, P. and González Díaz, Germán and Walukiewicz, W. (2015) Effects of the d-donor level of vanadium on the properties of Zn_(1-x)V_(x)O films. Applied physics letters, 106 (18). ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.4919791


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Abstract

We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn_(1-x)V_(x)O with 0 ≤ x ≤ 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x = 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB (E+) and the downward shift of the fully occupied E- band derived from the vanadium d-levels. The composition dependence of optical absorption edge (E+) and PL peak (E-) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.


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© 2015 AIP Publishing LLC. This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division and National Center for Electron Microscopy/LBNL, under Contract No. DE-AC02-05CH11231. This work was partially supported by the Project MADRID-PV (P 2013/MAE-2780) funded by the Comunidad de Madrid and the project TEC 2013-41730-R and ENE2013-46624-C4-2 from the Spanish MINECO. E. García-Hemme acknowledges the support by a PICATA Predoctoral Fellowship of the Moncloa Campus of International Excellence (UCM-UPM).

Uncontrolled Keywords:ZnO thin-films; Semiconductor; Band; Alloys; States.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:31317
Deposited On:24 Jul 2015 11:52
Last Modified:10 Dec 2018 14:57

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