Publication: Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO_(2)
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2013-02-11
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American Institute of Physics
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Abstract
Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistorcapacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation.
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© 2013 American Institute of Physics. This work was supported by AFOSR Grant No. FA9550- 12-1-0381, COLCIENCIAS, CENM and “El Patrimonio Autónomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnología y la Innovación Francisco José de Caldas” Contract RC—No. 275-2011, and ISF Grant No. 727/11. R.S. wishes to acknowledge a Ramón y Cajal Fellowship from the Ministerio de Ciencia e Innovación (MICINN) in Spain. E.J.P. wishes to acknowledge “Programa Nacional de Ciencias Básicas” COLCIENCIAS (No. 120452128168). During the publication process of this manuscript, out-of-plane impedance measurements were published on VO_(2) films grown on TiO_(2) substrates. These results also imply the coexistence of metallic and insulating phases.
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