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Growth and interface engineering of highly strained low bandgap group IV semiconductors

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Wirths, S. and Pampillón Arce, María Ángela and San Andres Serrano, Enrique and Starge, D. and Tiedemann, A.T. and Mussler, G. and Fox, A. and Breuer, U. and Hartmann, J-M. and Mantl, S. and Buca, D. (2014) Growth and interface engineering of highly strained low bandgap group IV semiconductors. 2014 7th International Silicon-Germanium Technology and device meetinTING (ISTDM) . pp. 13-14.

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Official URL: http://dx.doi.org/10.1109/istdm.2014.6874645


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Abstract

Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.


Item Type:Article
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© 2014 IEEE. International Silicon-Germanium Technology and Device Meeting (ISTDM) (7. 2014. Singapore).

Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:33320
Deposited On:28 Sep 2015 10:38
Last Modified:10 Dec 2018 14:58

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