Publication: Growth and interface engineering of highly strained low bandgap group IV semiconductors
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2014
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IEEE
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Abstract
Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.
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© 2014 IEEE. International Silicon-Germanium Technology and Device Meeting (ISTDM) (7. 2014. Singapore).
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