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Crossed Ga_2O_3/SnO_2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution

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Martínez Criado, Gema and Segura Ruiz, Jaime and Manh-Hung, Chu and Tucoulou, Remi and López García, Iñaki and Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2014) Crossed Ga_2O_3/SnO_2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution. Nano letters, 14 (10). pp. 5479-5467. ISSN 1530-6984

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Official URL: http://dx.doi.org/10.1021/nl502156h


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Abstract

Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local structure in crossing points in metal oxide nanowires. Thus, if intentionally grown crossed nanowires are well-patterned, an ideal model to the role of impurities in the coupling formation, structural modifications, and atomic site configuration based on crossed Ga_2O_3/SnO_2 nanowires. Our experiment opens new avenues for further local structure studies with both nanometer resolution and elemental sensitivity.


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© 2014 American Chemical Society.
The authors thank Irina Snigireva and Armando Vicente Solé for their assistance with the SEM measurements and data processing using PyMca, respectively. We thank Peter Cloetens and Sylvain Labouréfor their help and the ESRF for the beam time allocated. This work has been partially supported by the NANOWIRING Marie Curie ITN (EU project no. PITN-GA- 2010 -265073) and by MINECO (Projects MAT 2012-31959 and Consolider Ingenio CSD 2009-00013).

Uncontrolled Keywords:X-Ray-Absorption; Scanning photoelectron Microscopy; Inas nanowires; Optoelectronic devices; Electronic-structure; Building-blocks; Oxide nanowires; Gallium oxide; Zno nanorods; Spectroscopy
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:33534
Deposited On:13 Oct 2015 16:21
Last Modified:14 Oct 2015 14:53

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