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Yttria-stabilized zirconia/SrTiO_(3) oxide heteroepitaxial interface with symmetry discontinuity



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Scigaj, M. and Dix, N. and Cabero Piris, Mariona and Rivera Calzada, Alberto Carlos and Santamaría Sánchez-Barriga, Jacobo and Fontcuberta, J. (2014) Yttria-stabilized zirconia/SrTiO_(3) oxide heteroepitaxial interface with symmetry discontinuity. Applied physics Letters, 104 (25). ISSN 0003-6951


Official URL: http://dx.doi.org/10.1063/1.4885089



We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO_(3)(110) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with [110]YSZ(001)//[001]SrTiO_(3)(110) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO_(3)(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities.

Item Type:Article
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© 2014 AIP Publishing LLC. Financial support by the Spanish Government [Project Nos. MAT2011-29269-CO3 and NANOSELECT CSD2007- 00041] and Generalitat de Catalunya (No. 2009 SGR 00376) is acknowledged.

Uncontrolled Keywords:Thin-films, Heterostructures, Growth.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:33750
Deposited On:29 Oct 2015 08:59
Last Modified:10 Dec 2018 14:57

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