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Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage
Sucesos Aislados inducidos por neutrones en una memoria estática de acceso aleatorio comercial a tensiones ultrabajas

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Clemente Barreira, Juan Antonio and Franco Peláez, Francisco Javier and Vila, Francesca and Baylac, Maud and Ramos Vargas, Pablo Francisco and Vargas Vallejo, Vanessa Carolina and Mecha López, Hortensia and Agapito Serrano, Juan Andrés and Velazco, Raoul (2015) Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage. In 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2015. IEEE-Inst Electrical Electronics Engineers Inc, pp. 162-165. ISBN 978-1-5090-0232-0

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Official URL: http://dx.doi.org/10.1109/RADECS.2015.7365640




Abstract

This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.


Item Type:Book Section
Additional Information:

©IEEE 2015
European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú).
Date of Conference: 14-18 Sept. 2015

Uncontrolled Keywords:COTS; LPSRAM; Neutron tests; Radiation hardness; Reliability; Soft error; SRAM
Subjects:Sciences > Physics > Electronics
Sciences > Physics > Radioactivity
Sciences > Computer science > Integrated circuits
ID Code:34157
Deposited On:19 Jan 2016 16:29
Last Modified:10 Dec 2018 14:57

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