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Statistical anomalies of bitflips in SRAMs to discriminate MCUs from SEUs
Anomalías estadísticas de los bits corruptos en memorias estáticas de acceso aleatorio para distinguir eventos múltiples de simples.

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Clemente Barreira, Juan Antonio and Franco Peláez, Francisco Javier and Villa, Francesca and Rey, Sole and Baylac, Maud and Mecha López, Hortensia and Agapito Serrano, Juan Andrés and Puchner, Helmut and Hubert, Guillaume and Velazco, Raoul (2015) Statistical anomalies of bitflips in SRAMs to discriminate MCUs from SEUs. In 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2015. IEEE-Inst Electrical Electronics Engineers Inc, pp. 507-510. ISBN 978-1-5090-0232-0

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Official URL: http://dx.doi.org/10.1109/RADECS.2015.7365670




Abstract

This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.


Item Type:Book Section
Additional Information:

©IEEE 2015
European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú).
Date of Conference: 14-18 Sept. 2015

Uncontrolled Keywords:SRAMs; Single event upsets; Multiple cell upsets; Neutron tests
Subjects:Sciences > Physics > Electronics
Sciences > Physics > Radioactivity
Sciences > Computer science > Integrated circuits
ID Code:34217
Deposited On:19 Jan 2016 17:00
Last Modified:10 Dec 2018 14:57

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