Universidad Complutense de Madrid
E-Prints Complutense

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Impacto

Downloads

Downloads per month over past year

Feijoo, P.C. and Pampillón Arce, María Ángela and San Andrés Serrano, Enrique and Fierro, J.L.G. (2015) Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering. Thin Solid Films, 593 . pp. 62-66. ISSN 0040-6090

[img]
Preview
PDF
879kB

Official URL: http://dx.doi.org/10.1016/j.tsf.2015.07.045


URLURL Type
http://www.sciencedirect.com/Publisher


Abstract

In this work we use the high pressure sputtering technique to deposit the high permittivity dielectric gadolinium scandate on silicon substrates. This nonconventional deposition technique prevents substrate damage and allows for growth of ternary compounds with controlled composition. Two different approaches were assessed: the first one consists in depositing the material directly from a stoichiometric GdScO_(3) target; in the second one, we anneal a nano-laminate of <0.5 nm thick Gd_(2)O_(3) and Sc_(2)O_(3) films in order to control the composition of the scandate. Metal-insulator-semiconductor capacitors were fabricated with platinum gates for electrical characterization. Accordingly, we grow a Gd-rich Gd_(2-x)Sc_(x)O_(3) film that, in spite of higher leakage currents, presents a better effective relative permittivity of 21 and lower density of defects.


Item Type:Article
Additional Information:

© 2015 Elsevier B.V. The authors acknowledge “CAI de Técnicas Físicas” and “CAI de Espectroscopía” of the “Universidad Complutense de Madrid” for sample fabrication and FTIR measurements respectively. The microscopy works have been conducted in the "Laboratorio de Microscopias Avanzadas" at "Instituto de Nanociencia de Aragón” of the “Universidad de Zaragoza”. Authors thank them their technical support and expertise. This work was funded by the project TEC2010-18051 from the Spanish “Ministerio de Economía y Competitividad”, and the “Formación de Personal Investigador” program under grant BES-2011-043798.

Uncontrolled Keywords:Particle fluxes, Gate oxides, Thin-films, Thermalization, Dielectrics, Integration, Transistors, Technology, Plasma, Si.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:35321
Deposited On:02 Feb 2016 11:15
Last Modified:10 Dec 2018 14:57

Origin of downloads

Repository Staff Only: item control page