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Subband energy in two-band δ-doped semiconductors

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Domínguez-Adame Acosta, Francisco (1996) Subband energy in two-band δ-doped semiconductors. Physics Letters A, 211 (4). pp. 247-251. ISSN 0375-9601

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Official URL: http://dx.doi.org/10.1016/0375-9601(95)00976-0




Abstract

We study electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ -doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ -doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.


Item Type:Article
Additional Information:

© Elsevier B.V. or its licensors or contributors.
This work is supported by CICYT (Spain) through project MAT95-0325.

Uncontrolled Keywords:Doping layer; GAAS; MBE
Subjects:Sciences > Physics > Materials
ID Code:37916
Deposited On:26 May 2016 15:53
Last Modified:26 May 2016 15:53

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