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The role of impurities in the shape, structure and physical properties of semiconducting oxide nanostructures grown by thermal evaporation

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López García, Iñaki and Cebriano Ramírez, Teresa and Hidalgo Alcalde, Pedro and Nogales Díaz, Emilio and Piqueras de Noriega, Javier and Méndez Martín, Bianchi (2016) The role of impurities in the shape, structure and physical properties of semiconducting oxide nanostructures grown by thermal evaporation. AIMS materials science, 3 (1). pp. 425-433. ISSN 2372-0468

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Official URL: http://dx.doi.org/10.3934/matersci.2016.2.425


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Abstract

A thermal evaporation method developed in the research group enables to grow and design several morphologies of semiconducting oxide nanostructures, such as Ga_2O_3, GeO_2 or Sb_2O_3, among others, and some ternary oxide compounds (ZnGa_2O_4, Zn_2GeO_4). In order to tailor physical properties, a successful doping of these nanostructures is required. However, for nanostructured materials, doping may affect not only their physical properties, but also their morphology during the thermal growth process. In this paper, we will show some examples of how the addition of impurities may result into the formation of complex structures, or changes in the structural phase of the material. In particular, we will consider the addition of Sn and Cr impurities into the precursors used to grow Ga_2O_3, Zn_2GeO_4 and Sb_2O_3 nanowires, nanorods or complex nanostructures, such as crossing wires or hierarchical structures. Structural and optical properties were assessed by electron microscopy (SEM and TEM), confocal microscopy, spatially resolved cathodoluminescence (CL), photoluminescence, and Raman spectroscopies. The growth mechanisms, the luminescence bands and the optical confinement in the obtained oxide nanostructures will be discussed. In particular, some of these nanostructures have been found to be of interest as optical microcavities. These nanomaterials may have applications in optical sensing and energy devices.


Item Type:Article
Additional Information:

© American Institute of Materials Science (AIMS).
This work has been supported by MINECO (Projects MAT 2012–31959, MAT 2015-65274R and CSD 2009–00013). The authors also acknowledge EAA Grants (NILS project 008–ABEL CM–2013).

Uncontrolled Keywords:Ga_2O_3 nanowires; Luminescence; Microrods; Beta- Ga_2O_3; SN
Subjects:Sciences > Physics > Materials
ID Code:38915
Deposited On:26 Aug 2016 08:38
Last Modified:13 Feb 2018 13:58

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