Publication: Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
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Publication Date
2016-07-16
Authors
García, Héctor
Castán, Helena
Dueñas, Salvador
Bailón, Luis
Prado Millán, Álvaro del
Mártil de la Plaza, Ignacio
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Springer
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Abstract
A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.
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© 2016 The Author(s). The study has been supported by the Spanish TEC2014 under Grant Nos. 52152-C3-3-R and TEC2013-41730-R, funded by the Ministerio de Economía y Competitividad, and the P2013/MAE-2780 funded by the Comunidad de Madrid.
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