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Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs

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Clemente Barreira, Juan Antonio and Franco Peláez, Francisco Javier and Villa, Francesca and Baylac, Maud and Rey, Solenne and Mecha López, Hortensia and Agapito Serrano, Juan Andrés and Puchner, Helmut and Hubert, Guillaume and Velazco, Raoul (2016) Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs. IEEE Transactions on Nuclear Science, 63 (4). pp. 2087-2094. ISSN 0018-9499

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Official URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7508969



Abstract

Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Field Programmable Gate Arrays (FPGAs) and the original authors indicate that it is also valid for SRAMs. This paper presents a modified methodology that is based on checking the XORed addresses with bitflips, rather than on the difference. Irradiation tests on CMOS 130 & 90 nm SRAMs with 14-MeV neutrons have been performed to validate this methodology. Results in high-altitude environments are also presented and cross-checked with theoretical predictions. In addition, this methodology has also been used to detect modifications in the organization of said memories. Theoretical predictions have been validated with actual data provided by the manufacturer.


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Uncontrolled Keywords:SRAMs, Single event upsets, Multiple cell upsets, Neutron tests
Subjects:Sciences > Computer science > Hardware
ID Code:39047
Deposited On:08 Sep 2016 09:05
Last Modified:19 Dec 2016 08:59

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