Universidad Complutense de Madrid
E-Prints Complutense

Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

Impacto

Downloads

Downloads per month over past year

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Prado Millán, Álvaro del and Olea Ariza, Javier and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells. IEEE journal of photovoltaics, 6 (5). ISSN 2156-3381

[img]
Preview
PDF
1MB

Official URL: http://dx.doi.org/10.1109/JPHOTOV.2016.2581487


URLURL Type
http://ieeexplore.ieee.org/Publisher


Abstract

We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with intrinsic thin layer (HIT) solar cells. Physical characterization of the deposited films shows that the hydrogen content is in the 15-30% range, depending on deposition temperature. The optical bandgap value is always comprised within the range 1.9- 2.2 eV. Minority carrier lifetime measurements performed on the heterostructures reach high values up to 1.3 ms, indicating a well-passivated a-Si:H/c-Si heterointerface for deposition temperatures as low as 100°C. In addition, we prove that the metal-oxide- semiconductor conductance method to obtain interface trap distribution can be applied to the a-Si:H/c-Si heterointerface, since the intrinsic a-Si:H layer behaves as an insulator at low or negative bias. Values for the minimum of D_it as low as 8 × 10^10 cm^2 · eV^-1 were obtained for our samples, pointing to good surface passivation properties of ECR-deposited a-Si:H for HIT solar cell applications.


Item Type:Article
Additional Information:

© 2016 IEEE.
This work was supported in part by the Project MADRID-PV (under Grant 2013/MAE-2780) funded by the Comunidad de Madrid, by the Spanish Ministerio de Economía y Competitividad (MINECO) under Grant TEC 2013-41730-R and Grant TEC2016-75099-R, and by the Universidad Complutense de Madrid (Programa de Financiación de Grupos de Investigación UCM–Banco Santander) under Grant 910173-2014. The work of D. Montero was supported by the Spanish MINECO under Contract BES-2014-067585.

Uncontrolled Keywords:Silicon; Photovoltaic cells; Substrates; Absorption; Surface treatment; Plasmas; Temperature; Measurement minority lifetime; Electron cyclotron resonance chemical vapor deposition (ECR-CVD); heterojunction; interface defects; metal insulator semiconductor (MIS) devices
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:39308
Deposited On:06 Oct 2016 14:54
Last Modified:10 Dec 2018 14:57

Origin of downloads

Repository Staff Only: item control page