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Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

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Olea Ariza, Javier y López, E. y Antolín, E. y Martí, A. y Luque, A. y García Hemme, Eric y Pastor, D. y García Hernansanz, Rodrigo y Prado Millán, Álvaro del y González Díaz, Germán (2016) Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap. Journal of physics D: applied physics, 49 (5). ISSN 0022-3727

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URL Oficial: http://dx.doi.org/10.1088/0022-3727/49/5/055103


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http://iopscience.iop.org/Editorial


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Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.


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© 2016 IOP Publishing Ltd.
The authors would like to acknowledge the C A I de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations, the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements and Dr J P González García from CIEMAT for reflectance measurements. Research by E García-Hemme was supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J Olea acknowledges financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402), under which this research was undertaken. D Pastor acknowledges the financial support to the grant EX-2010-0662 from the Spanish Science Ministry. This work was partially supported by the Spanish MINECO (Economic and Competitiviness Ministery) through grant TEC 2013-41730-R. The authors acknowledge the financial support from la Comunidad de Madrid throughout the funding of the project, MADRID-PV (S2013/MAE-2780).

Palabras clave:Silicon; Supersaturated; Titanium; Photoresponse
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electromagnetismo
Ciencias > Física > Electrónica
Código ID:39343
Depositado:07 Oct 2016 14:57
Última Modificación:10 Oct 2016 07:58

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