Universidad Complutense de Madrid
E-Prints Complutense

High On/Off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity

Impacto

Downloads

Downloads per month over past year

Shen, Xiao and Pennycook, Timothy J. and Hernández Martín, David and Pérez, Ana and Varela del Arco, María and Puzyrev, Yevgeniy S. and León Yebra, Carlos and Sefrioui, Zouhair (2016) High On/Off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity. Advanced materials interfaces, 3 (16). ISSN 2196-7350

[img]
Preview
PDF
Creative Commons Attribution Non-commercial.

1MB

Official URL: http://dx.doi.org/10.1002/admi.201600086




Abstract

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in electronics remains a challenge. Here we report memristive switching in a La_(0.7)Ca_(0.3)MnO_(3)/PrBa_(2)Cu_(3)O_(7) bilayer with an On/Off ratio greater than 103 and demonstrate that the phenomenon originates from a new type of interfacial magnetoelectricity. Using results from firstprinciples calculations, we show that an external electric-field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead” layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost about of a tenth of atto Joule for write/erase a “bit”. Our results indicate new opportunities for manganite/cuprate systems and other transition-metal-oxide junctions in memristive applications.


Item Type:Article
Additional Information:

© 2016 WILEY-VCH Verlag GmbH & Co. The work at Vanderbilt was supported by National Science Foundation grant DMR- 1207241, by Department of Energy grant DE-FG02-09ER46554, and by the McMinn Endowment at Vanderbilt University. Computational support was provided by the NSF XSEDE under Grant # TG-DMR130121. Research at UCM was supported by Spanish MICINN through grants MAT2011-27470-C02 and Consolider Ingenio 2010-CSD2009- 00013 (Imagine), by CAM through grant S2014/MAT-PHAMA II. Research at SuperSTEM, the UK National Facility for Aberration-Corrected STEM was supported by the EPSRC.

Uncontrolled Keywords:Electric-field control; Tunnel-junctions; Oxide; Magnetization;Mechanism; Systems; Memory; Films.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:39715
Deposited On:04 Nov 2016 11:35
Last Modified:10 Dec 2018 14:57

Origin of downloads

Repository Staff Only: item control page