Publication: Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B
Loading...
Official URL
Full text at PDC
Publication Date
2015-05-13
Authors
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society
Citations
Exportar
Abstract
Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.
Description
© 2015 American Physical Society.
This work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-R.
W. S. and D. G. T. contributed equally to this work.
Articulo firmado por más de 10 autores.