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Magnetotunneling between two-dimensional electron gases in InAs-AlSb-GaSb heterostructures

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Lin, Y. and González Herrera, Elvira María and Méndez, E. E. and Magno, R. and Bennett, B. R. and Bracker, A.S. (2003) Magnetotunneling between two-dimensional electron gases in InAs-AlSb-GaSb heterostructures. Physical review B, 68 (3). ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.68.035311


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Abstract

We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases, formed at nominally identical InAs-AlSb interfaces, most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same frequency. This result is explained quantitatively with a model of the conductance in which the 2D gases have different densities and can tunnel between Landau levels with different quantum indices. When the epitaxial growth conditions of the interfaces are optimized, the zero-bias magnetoconductance shows a single set of oscillations, thus proving that the asymmetry between the two electron gases can be eliminated.


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©2003 The American Physical Society.
We are grateful to W. I. Wang, who provided some of the samples used in this study, and to B. Z. Nosho, L. J. Whitman, and B. V. Shanabrook for their assistance in developing MBE techniques applied to the growth of samples C and D discussed here. This work was supported by the US Army Research Office (Grant No. DAAD- 19-99-1-0270) and the Office of Naval Research.

Uncontrolled Keywords:Spin-orbit interaction; Quantum-well; Field
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:43872
Deposited On:19 Jul 2017 15:30
Last Modified:19 Jul 2017 15:30

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