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Ferromagnetism in bulk Co-Zn-O

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Publication Date
2006-12
Authors
Quesada, A.
García, M. A.
Andrés, M.
Fernández, J. F.
Caballero, A. C.
Martín González, M. S.
Briones, F.
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American Institute of Physics
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The origin of ferromagnetism in diluted magnetic semiconductors is still an open question, yielding a great deal of research across the world. This work focuses on the Co-Zn-O system. Room-temperature ferromagnetism is observed after a partial reaction of Co_3O_4 and ZnO, which can be ascribed neither to carrier mediation nor segregated cobalt metallic clusters. Another mechanism is yielding room-temperature ferromagnetism. This mechanism is associated with a partial reaction of ZnO and Co_3O_4 grains, and always appears when the starting phases (Co_3O_4 and ZnO) are present in the sample, suggesting that interfaces are involved in the origin of the observed ferromagnetism.
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©2006 American Institute of Physics. This work has been supported by the University Complutense through the project PR1/05/13325 and CICYT project MAT2004–04843–C02–01.
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