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Ferromagnetism in bulk Co-Zn-O



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Quesada, A. y García, M. A. y Andrés, M. y Hernando Grande, Antonio y Fernández, J. F. y Caballero, A. C. y Martín González, M. S. y Briones, F. (2006) Ferromagnetism in bulk Co-Zn-O. Journal of applied physics, 100 (11). ISSN 0021-8979

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URL Oficial: http://dx.doi.org/10.1063/1.2399884

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The origin of ferromagnetism in diluted magnetic semiconductors is still an open question, yielding a great deal of research across the world. This work focuses on the Co-Zn-O system. Room-temperature ferromagnetism is observed after a partial reaction of Co_3O_4 and ZnO, which can be ascribed neither to carrier mediation nor segregated cobalt metallic clusters. Another mechanism is yielding room-temperature ferromagnetism. This mechanism is associated with a partial reaction of ZnO and Co_3O_4 grains, and always appears when the starting phases (Co_3O_4 and ZnO) are present in the sample, suggesting that interfaces are involved in the origin of the observed ferromagnetism.

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©2006 American Institute of Physics.
This work has been supported by the University Complutense through the project PR1/05/13325 and CICYT project MAT2004–04843–C02–01.

Palabras clave:Room-temperature Ffrromagnetism; Doped ZnO; Magnetic semiconductors; Thin-films; Origin; Zn1-Xcoxo; System
Materias:Ciencias > Física > Física de materiales
Ciencias > Física > Física del estado sólido
Código ID:44126
Depositado:28 Aug 2017 17:32
Última Modificación:28 Aug 2017 17:32

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