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CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN

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Guzmán Navarro, G and Herrera Zaldivar, M. and Valenzuela Benavides, J. and Maestre Varea, David (2011) CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN. Journal of applied physics, 110 (3). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3620986


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Abstract

We report a cathodoluminescence (CL) study of ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN on Si(100) and Au/Si(00) substrates. Condensation and subsequent oxidation of metallic Ga is suggested as the growth mechanism of ß-Ga_2O_3 nanowires. The ß-Ga_2O_3 nanowires grown on Si(100) show multiple bends or undulations, together with a strong UV emission at 3.31 eV and a weak blue emission centered at 2.8 eV as a band component. The ß-Ga_2O_3 nanowires grown on Au/Si(100) substrates recorded a lower CL intensity of a well-defined blue emission of 2.8 eV. A thermal treatment on these samples produced an increase of the UV emission and quenching of the blue band. Thermal annealing of oxygen vacancies is proposed as the responsible mechanism for the observed behavior of these samples.


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©2011 American Institute of Physics
This work was partially supported by grants from CONACyT (Grant No. 102519) and PAPIIT-UNAM (Grant No. IN102111), Mexico. Technical help from E. Aparicio, E. Flores, F. Ruiz, A. Tiznado, I. Gradilla, D. Domínguez, and L. Gradilla is greatly appreciated.

Uncontrolled Keywords:Luminescence
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:44851
Deposited On:02 Nov 2017 15:44
Last Modified:02 Nov 2017 15:44

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