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Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

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Rezgui, B. and Sibai, A. and Nychyporuk, T. and Lemiti, M. and Bremond, G. and Maestre Varea, David and Palais, O. (2010) Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films. Applied physics letters, 96 (18). ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3427386


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Abstract

The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN(x)) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.


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© Amer Inst Physics.
This work was supported by the French National Agency of Research (ANR) in the framework of the “Cellules photovoltaïques tandem tout silicium”-DUOSIL grant program (Grant No. ANR-06-PSPV-005). The authors would also like to thank the Rhône-Alpes region for the financial support through the PHOSIL project.

Uncontrolled Keywords:Nanocrystals; Confinement
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:44879
Deposited On:02 Nov 2017 13:48
Last Modified:02 Nov 2017 13:54

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