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Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells

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Maestre Varea, David and Palais, O. and Barakel, D. and Pasquinelli, M. and Alfonso, B. and Gourbilleau, F. and De Laurentis, M. and Irace, A. (2010) Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells. Journal of applied physics, 107 (6). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3309761


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Abstract

SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.


Item Type:Article
Additional Information:

© 2010 American Institute of Physics.
French authors thank the ANR Solaire Photovoltaïque (National Research Agency) for financial support of this work through the project DUOSIL. We thank also C. Dominici and W. Saikaly from CP2M for their contribution to HTREM observations.
A.I. thanks the MIUR for financial support under the FIRB framework

Uncontrolled Keywords:Silicon; Nanostructures; Nanoparticles; Nanocrystals; Luminescence; Fabrication; Absorption; Lifetime; Industry; Samples
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:44894
Deposited On:02 Nov 2017 13:02
Last Modified:02 Nov 2017 13:02

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