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Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell

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Gourbilleau, F. and Ternon, C. and Maestre Varea, David and Palais, O. and Dufour, C. (2009) Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell. Journal of applied physics, 106 (1). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3156730


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Abstract

Si-rich-SiO_2(SRSO)/SiO_2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100°C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient α (in cm^(-1)) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si ncls.


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© 2009 American Institute of Physics
Some of the authors want to thank Pr Xavier Portier for performing some of the HREM observations. This work has been supported by the ANR Solaire Photovoltaique through the DUOSIL project.

Uncontrolled Keywords:Si/SiO_2 Superlattices; Optical-properties; Nanocrystals; Luminescence; States; Dynamics; Defect; Films; Glass; SiO_2
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:44895
Deposited On:02 Nov 2017 12:25
Last Modified:02 Nov 2017 12:25

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