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Doping of Ga_2O_3 bulk crystals and NWs by ion implantation

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López, I. and Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2014) Doping of Ga_2O_3 bulk crystals and NWs by ion implantation. In Oxide-based materials and devices V. Proceedings of SPIE . Spie-Int Soc Optical Engineering. ISBN 978-0-8194-9900-4

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Official URL: http://dx.doi.org/10.1117/12.2037627




Abstract

Ga_2O_3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1x10^(13) to 4x10^(15) at/cm^(2). The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channeling mode (RBS/C). RBS/C results suggest that implantation causes a mixture of defect clusters and extended defects such as dislocations. Amorphisation starts at the surface for fluences around 1x10^(15) at/cm^(2) and then proceeds to deeper regions of the sample with increasing fluence. Amorphous regions and defect clusters are efficiently removed during rapid thermal annealing at similar to 1100 °C; however, Eu diffuses towards the surface. Nevertheless, Eu ions are optically activated and show cathodoluminescence at room temperature. Results in bulk samples are compared to those in Eu-implanted Ga_2O_3 nanowires and despite strong similarities in the structural properties differences were found in the optical activation. Furthermore, damage and dopant incorporation studies were performed using the Perturbed Angular Correlation technique, which allows probing the immediate lattice surroundings of an implanted radioactive probe at the atomic level.


Item Type:Book Section
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© Spie-Int Soc Optical Engineering
Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West (2014. San Francisco).
Artículo firmado por mas de diez autores.
Financial support by FCT Portugal through grants PTDC/CTM-NAN/2156/2012, PTDC/FIS-NAN/0973/2012, CERN/FP/123585/2011, RECI/FIS-NAN/0183/2012 (FCOMP-01-0124-FEDER-027494), PEst-C/CTM/LA 25/2013, and individual grants “Investigador FCT” (KL), SFRH/ BD/76300/2011 (JR) is gratefully acknowledged. We thank R.A.S. Ferreira and V.P. Freitas (U. Aveiro) for their help in the PLE experiments. This work has been supported by MINECO through Projects MAT 2012-31959 and Consolider CSD 2009-00013.

Uncontrolled Keywords:Beta-Ga_2O_3 single-crystals; Optical-properties; Radiation-damage; Nanowires; Gan
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:45085
Deposited On:31 Oct 2017 17:57
Last Modified:13 Feb 2018 13:57

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