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Optical energies of AllnN epilayers

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Nogales Díaz, Emilio (2008) Optical energies of AllnN epilayers. Journal of applied physics, 103 (7). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.2898533


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Abstract

Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of ≈ to 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13 < x < 0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field.


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©2008 American Institute of Physics.
Financial support from the UK EPSRC, FCT, Portugal (BPD/18958/2004 and PTDC/FIS/65233/2006) and from the ORS award scheme (K.W.) is gratefully acknowledged.
Artiículo firmado por mas de 10 autores.

Uncontrolled Keywords:Vapor-phase epitaxy; Quantum-wells; Gan; Alloys; Films
Subjects:Sciences > Physics > Solid state physics
Sciences > Physics > Mathematical physics
ID Code:45137
Deposited On:25 Oct 2017 16:49
Last Modified:25 Oct 2017 16:49

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