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Spectrometric characterization of amorphous silicon PIN detectors



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Leyva, A. y Ramirez, F. J. y Ortega Villafuerte, Yanicet y Estrada, M. y Cabal, A. y Cerdeira, A. y Díaz, A (2000) Spectrometric characterization of amorphous silicon PIN detectors. In Medical physics. AIP Conference Proceedings (538). Amer Inst Physics, pp. 201-205. ISBN 1-56396-963-7

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URL Oficial: https://doi.org/10.1063/1.1328959

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During the last years, much interest has been dedicated to the use of amorphous silicon PIN diodes as particle and radiation detectors for medical applications. This work presents the spectrometric characterization of PECVD high deposition rate diodes fabricated at our laboratory, with thickness up to 17.5 μm. Results show that the studied devices detect the Am^(241) alpha particles and the medical X-rays generated by a mammograph model Senographe 700T from General Electric. Possible reasons of the observed energy losses are discussed in the lest. Using the SRIM2000 program, the transit of 5.5 MeV alpha particles through a diode was simulated, determining the optimum thickness for these particles to deposit their energy in the intrinsic layer of the diode.

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© Amer Inst Physics.
Mexican Symposium on Medical Physics (4. 2000. Merida, Mejico).
Authors would like to thank the Ionizing Radiation Metrology Laboratory of ININ for the use of his standards, X-ray units and installations. This work was supported by CONACYT project 28092A.

Palabras clave:Engineering, biomedical; Physics, applied
Materias:Ciencias > Física > Física de materiales
Ciencias > Física > Física del estado sólido
Código ID:45397
Depositado:15 Nov 2017 19:30
Última Modificación:15 Nov 2017 19:30

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