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Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

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Marcano, N. and Sangiao, S. and Plaza, M. and Pérez García, Lucas and Fernández Pacheco, A. and Córdoba, R. and Sánchez, M. C. and Morellón, L. and Ibarra, M. R. and De Teresa, J. M. (2010) Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires. Applied physics letters, 96 (8). ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3328101


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Abstract

We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.


Item Type:Article
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© American Institute of Physics.
This work was supported by Spanish Ministry of Science (through Project Nos. MAT2007-65965-C02-02 and MAT2008-06567-C02) including FEDER funding and the Aragon Regional Government. N. Marcano and S. Sangiao acknowledge financial support from Spanish CSIC (JAE-doc program) and Spanish MEC (FPU program).

Uncontrolled Keywords:Transport-properties; Bismuth nanowires; Localization; Arrays; Films; Metal
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:45451
Deposited On:21 Nov 2017 12:47
Last Modified:11 Dec 2017 09:35

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