Publication:
Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

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Publication Date
2010-02-22
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Marcano, N.
Sangiao, S.
Plaza, M.
Fernández Pacheco, A.
Córdoba, R.
Sánchez, M. C.
Morellón, L.
Ibarra, M. R.
De Teresa, J. M.
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American Institute of Physics
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We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.
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© American Institute of Physics. This work was supported by Spanish Ministry of Science (through Project Nos. MAT2007-65965-C02-02 and MAT2008-06567-C02) including FEDER funding and the Aragon Regional Government. N. Marcano and S. Sangiao acknowledge financial support from Spanish CSIC (JAE-doc program) and Spanish MEC (FPU program).
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