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Magnetic phases and anisotropy in Gd-doped GaN

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Pérez García, Lucas and Lau, G. S. and Dhar, S. and Brandt, O. and Ploog, K. H. (2006) Magnetic phases and anisotropy in Gd-doped GaN. Physical review B, 74 (19). ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.74.195207


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Abstract

In this work we present a detailed study of the magnetic properties of GaN:Gd layers with different Gd content (6x10^(15) to 1x10^(19) cm^^ (-3)) grown by reactive molecular beam epitaxy. The temperature dependence of the magnetic properties suggests the existence of at least two ferromagnetic phases with different order temperatures. The coexistence of two ferromagnetic phases is explained within the framework of the phenomenological model, introduced previously by Dhar [Phys. Rev. Lett. 94, 037205 (2005)]. The layers are also found to exhibit a magnetic anisotropy, with the hard axis along the growth direction and an easy plane parallel to the surface. Moreover, the saturation magnetization shows a dependence on the orientation of the magnetic field, which may result from the anisotropy in the polarization induced in the GaN matrix by the internal and external magnetic fields.


Item Type:Article
Additional Information:

© 2006American Physical Society
We thank R. Koch for careful reading of the manuscript. L.P. gratefully acknowledges the support of the Alexander von Humboldt foundation.

Uncontrolled Keywords:Molecular-beam epitaxy; Semiconductors; Ferromagnetism
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:45470
Deposited On:21 Nov 2017 13:01
Last Modified:21 Nov 2017 13:01

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