Universidad Complutense de Madrid
E-Prints Complutense

Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K

Impacto

Downloads

Downloads per month over past year

Dhar, S. and Pérez García, Lucas and Brandt, O. and Trampert, A. and Ploog, K. H. and Keller, J. and Beschoten, B. (2005) Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K. Physical review B, 72 (24). ISSN 1098-0121

[img]
Preview
PDF
218kB

Official URL: http://dx.doi.org/10.1103/PhysRevB.72.245203


URLURL Type
http://dx.doi.orgPublisher


Abstract

We present a systematic study of growth, structural, and magnetic characterization of GaN:Gd layers grown directly on 6H-SiC(0001) substrates by reactive molecular-beam epitaxy with a Gd concentration ranging from 7x10^(15) to 2x1019 cm^(−3). The structural properties of these layers are found to be identical to those of undoped GaN layers. However, the magnetic characterization reveals an unprecedented effect. The average value of the magnetic moment per Gd atom is found to be as high as 4000 μ_(b) as compared to its atomic moment of 8 μ_(b). Such a colossal magnetic moment can be explained in terms of a long range spin polarization of the GaN matrix by the Gd atoms which is reflected by the circular polarization of magnetophotoluminescence measurements. Moreover, the material system is found to exhibit ferromagnetism well above room temperature in the entire concentration range under investigation. We propose a phenomenological model to understand the macroscopic behavior of the system. Our study reveals a close connection between the observed ferromagnetism and the colossal magnetic moment of Gd. D


Item Type:Article
Additional Information:

© The American Physical Society.
We thank M. Ramsteiner, U. Jahn, and K. J. Friedland for important contributions to this work and V. F. Sapega, J. Herfort, M. Bowen, and R. Koch for valuable discussions and suggestions. We also acknowledge partial financial support of this work by the Bundesministerium für Bildung und Forschung of the Federal Republic of Germany. One of us (L.P.) thanks the Alexander von Humboldt Foundation, Germany for financial support.

Uncontrolled Keywords:Molecular-beam epitaxy; Exchange interactions; Layers; 6H-SiC(0001); Palladium
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:45494
Deposited On:21 Nov 2017 15:04
Last Modified:21 Nov 2017 15:04

Origin of downloads

Repository Staff Only: item control page