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Epitaxial integration of CoFe₂O₄ thin films on Si (001) surfaces using TiN buffer layers

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Prieto, Pilar and Marco, F. and Prieto, José E. and Ruiz Gómez, Sandra and Pérez García, Lucas and Perez del Real, Rafael and Velazquez, Manuel and De laFiguera, Juan (2018) Epitaxial integration of CoFe₂O₄ thin films on Si (001) surfaces using TiN buffer layers. Applied surface science, 436 . pp. 1067-1074. ISSN 0169-4332

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Official URL: http://dx.doi.org/10.1016/j.apsusc.2017.12.111


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Abstract

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe₂, or ceramic, CoFe₂2O₄, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe₂O₄ [100]/TiN [100]/Si [100]. Mossbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in- plane anisotropy depends on the lattice mismatch between CoFe₂O₂ and TiN, which is larger for CoFe₂O₄ thin films grown on the reactive sputtering process with ceramic targets.


Item Type:Article
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©2017 Elsevier B.V. All rights reserved.
This work was supported by the Spanish Ministry of Economy under the project number MAT2015-64110-CO2.

Uncontrolled Keywords:Cobalt ferrite; Epitaxial thin films; Silicon device integratio; Magnetic anisotropy.
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:46086
Deposited On:12 Apr 2018 13:42
Last Modified:13 Jun 2018 11:49

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