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SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2 MeV Neutrons

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Clemente, Juan Antonio and Hubert, Guilaume and Fraire, Juan and Franco Peláez, Francisco Javier and Villa, Francesca and Rey, Solenne and Baylac, Maud and Puchner, Helmut and Mecha, Hortensia and Velazco, Raoul (2018) SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2 MeV Neutrons. IEEE transactions on nuclear science (99). pp. 1-8. ISSN 0018-9499 (In Press)

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Official URL: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=23



Abstract

This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for SRAM power supplies ranging from 0.5 V to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform (MUSCA-SEP3). Large-scale SELs and SEFIs, observed in the 90-nm and 130-nm SRAMs respectively, are also presented and discussed.


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Uncontrolled Keywords:COTS, SRAM, neutron tests, radiation hard- ness, reliability, soft error, low-bias voltage
Subjects:Sciences > Physics > Nuclear physics
Sciences > Computer science > Integrated circuits
Sciences > Computer science > Hardware
Sciences > Computer science > Electronics
ID Code:46620
Deposited On:28 Feb 2018 14:48
Last Modified:07 Mar 2018 08:42

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