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Electrodeposition of Bi thin films on n-GaAs(111)B. II. Correlation between the nucleation process and the structural and electrical properties

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Prados Díaz, Alicia and Ranchal Sánchez, Rocío (2019) Electrodeposition of Bi thin films on n-GaAs(111)B. II. Correlation between the nucleation process and the structural and electrical properties. Journal of physical chemistry C, 122 (16). pp. 8886-8893. ISSN 1932-7447

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Official URL: http://dx.doi.org/10.1021/acs.jpcc.7b12263


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Abstract

The surface morphology and the crystal structure of 40 nm thin Bi films electrodeposited on GaAs(111)B at different growth overpotentials have been studied by means of atomic force microscopy and X-ray diffraction, respectively. The Bi/GaAs interface has also been electrically characterized by means of current-voltage curves that have been analyzed with the thermionic-field emission theory. Taking into account the results presented in Part I, we can conclude that the structural and electrical properties of the Bi layers are correlated with the nucleation process and, therefore, with the energy band diagram of the semiconductor-electrolyte interface. We have found that surface morphology is directly dependent on the amount of protons adsorbed on the GaAs surface, whereas the crystal quality and the interfacial properties also depend on the nucleation mechanism (instantaneous or progressive).


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© Amer Chemical Soc.
This work has been financially supported through project MAT2015-66888-C3-3-R of the Spanish Ministry of Economy and Competitiveness (MINECO/FEDER) and through the project PR26/16-3B-2 of Santander and Universidad Complutense de Madrid. We acknowledge the postdoctoral fellowship granted by Comunidad de Madrid and the European Union (PEJD2016/IND-2233). We also acknowledge the use of facilities of Instituto de Sistemas Optoelectrónicos y Microelectrónica (ISOM).

Uncontrolled Keywords:Thermionic-field-emission; Schottky barriers; Electrochemical deposition; Semiconductor electrodes; Gaas; Height; Contacts; Diodes
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:48014
Deposited On:13 Jun 2018 14:34
Last Modified:13 Jun 2018 15:05

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