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Influence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs



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Franco Peláez, Francisco Javier and Clemente Barreira, Juan Antonio and Mecha López, Hortensia and Velazco, Raoul (2019) Influence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs. IEEE Transactions on device and materials reliability, 19 (1). pp. 104-111. ISSN 1530-4388


Official URL: http://dx.doi.org/10.1109/TDMR.2018.2886358



After having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determine if two bitflips are related. However, if there are enough bitflips, it is possible that unrelated pairs of errors appear in nearby cells and they are erroneously taken as a multiple event. In this paper, radiation experiments are studied as a special case of the urn-and-balls problem in probability theory to estimate how the measured multiple-event cross sections must be corrected to remove the overestimation due to the false events.

Item Type:Article
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© 2018 IEEE
This work was supported in part by the Spanish MINECO projects FPA2015-69210-C6-5-R and TIN2017-87237-P, and by the UCM mobility program for young professors.

Uncontrolled Keywords:Birthday statistics; Multiple bit upset; Multiple cell upset; Radiation; Single bit upset; Single event upset; SRAMs
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
Sciences > Computer science > Integrated circuits
ID Code:50397
Deposited On:07 Mar 2019 15:40
Last Modified:11 Mar 2019 08:33

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