Publication: Highly Bi-doped Cu thin films with large spin-mixing conductance
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2018-10-22
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American Institute of Physics
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Abstract
The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we demonstrate the possibility of doping Cu with up to 10% of Bi atoms without evidence of Bi surface segregation or cluster formation. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures, reflecting the potentiality of these newmaterials.
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© Author(s) 2018
Artículo firmado por más de diez autores.
This work has been partially funded by MAT2014-52477-C5, MAT2017-87072-C4, and MAT2015-64110-C2-2-P from the Ministerio de Ciencia e Innovacion and Nanofrontmag from Comunidad de Madrid. IMDEA Nanociencia acknowledges support from the Severo Ochoa Programme for Centres of Excellence in R&D (MINECO, Grant No. SEV-2016-0686). We acknowledge the European Synchrotron Radiation Facility (ESRF), MINECO, and CSIC for provision of synchrotron radiation facilities, the BM25-SpLine staff for the technical support beyond their duties, and the financial support for the beamline (No. PIE-2010-OE-013-200014). We thank the Spanish National Center of Electron Microscopy for SEM measurements and the CAI de Difraccion de Rayos X, Universidad Complutense de Madrid, for XRD measurements. The TEM work has been conducted in the Laboratorio de Microscopias Avanzadas (LMA) at the Instituto de Nanociencia de Aragon (INA)-Universidad de Zaragoza. The authors acknowledge the LMA-INA for offering access to their instruments and expertise. M.A. acknowledges MSCA-IFEF-ST No. 656485-Spin3. J.W.A.R. acknowledges Royal Society (Superconducting Spintronics), Leverhulme Trust (No. IN-2013-033).